题  目：Research on Micro/Nanoelectronics: Novel Flash Memory, Two-Dimensional Semiconductors 

            and Topological Insulators

    报告人：Prof. Qiliang Li

    时  间：2014年7月19日（周四）上午10:00

    地  点：理科生命大楼B119

【报告人简介】 Qiliang Li received Ph.D. (2004) in Electrical and Computer Engineering from North Carolina State University. He received M.S. (1999), Nanjing Univ., and B.S. (1996), Wuhan Univ., both in Physics. His doctoral research was in the area of hybrid silicon/molecular field effect transistors and memories. In Oct. 2004, he joined the Semiconductor Electronics Division of National Institute of Standards and Technology (NIST), Gaithersburg, MD, as a research scientist, where he was involved with the fabrication, characterization and simulation of CMOS and nanoelectronics materials and devices. In August 2007, he joined the faculty of George Mason University, Fairfax, Virginia, where he is currently an associate professor of Electrical and Computer Engineering. He received the honor of Distinguished Virginia Microelectronics Consortium Professorship in 2007. He received NSF CAREER award in 2009, Mason Emerging Researcher/Scholar/Creator Award in 2011, and School of Engineering Rising Star in 2012.

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